PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A production method for a semiconductor element is provided to decrease a length of a channel not by decreasing a length of a gate electrode. CONSTITUTION: The production method for the semiconductor element comprises a step of: forming a gate oxide(14) on the surface of a semiconductor substrate(10); forming a first conducting layer(16) on the front face of it; forming a photoresist pattern(18) on the first conducting layer; forming an impurities area of a low density by ion-laminating impurities on the surface of the substrate; removing the photoresist pattern; forming a second conducting layer on the first conducting layer; forming a gate electrode by patterning the second conducting layer and the first conducting layer; forming a spacer(26) in the side wall of the gate electrode; forming an impurities area of a high density by ion-laminating impurities inside the substrate.