method FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to solve the problem of a low operation speed when a decrease of an impurity domain used as a source domain and a drain domain generates an increase of a resistance. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a gate(37) by inserting a gate insulated layer on a semiconductor substrate(31) of a first conductive type; forming a low density domain(39) of a second conductive type on the semiconductor substrate; forming a high density domain(43) of the second conductive type on the semiconductor substrate; forming a metal layer(45) on the semiconductor substrate and a filed oxidation layer(33) and forming a silicon ion injection domain(49) on a contact portion between the semiconductor substrate and the metal layer; forming a silicide layer(51) by reacting the contact portion and the metal layer with a silicon; and removing a not-reacted metal layer.