METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of semiconductor devices including an ion-implanting process is provided to prevent a channeling phenomenon without a slope ion-implanting. CONSTITUTION: The method comprises the steps of: manufacturing a wafer(30) by slicing an ingot, wherein the cutting plane of the wafer(30) and the crystalline plane of the ingot have an off-cut angle(theta); and ion-implanting dopants to the wafer(30) by substantially vertical direction. Before the ion-implanting step, a step of forming a screen oxide layer of the wafer(30) is further comprised. The off-cut angle has plus or minus 1-10 degrees.