| 摘要 |
PURPOSE: A semiconductor memory device is provided to allow a sense amplifier at the same place in each cell array block to be connected to the same main amplifier in each cell array block. CONSTITUTION: The semiconductor memory device comprises: first, second and third cell array blocks(41, 51, 61) each having a plurality of word lines arranged in a first direction and a plurality of pairs of bit lines; a first sense amplifier part(40) for sensing data on odd-numbered bit lines in the first cell array block; a second sense amplifier part(40) for sensing data on even-numbered bit lines in the first cell array block; a third sense amplifier part(60) for sensing data on odd-numbered bit lines in the second cell array block; a fourth sense amplifier part(70) for sensing data on even-numbered bit lines in the second cell array block; a fifth sense amplifier part(80) for sensing data on odd-numbered bit lines in the third cell array block; a sixth sense amplifier part(90) for sensing data on even-numbered bit lines in the third cell array block; a 4-bit local input/output line bus for transferring output signals from the first to sixth sense amplifier parts to first and fourth switching parts(52, 62, 72, 82) which are configured to twice number of the local input/output lines and switch the output signals from the first to sixth sense amplifier parts; first and fourth main amplifiers(53, 63, 73) for amplifying output signals from the first to fourth switching parts; and a transfer line for transferring output signals from the first and fourth switching parts to the first to fourth switching parts.
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