| 摘要 |
PURPOSE: Generally, conventional memory device uses a shared sense amplifier. In that case, sense amplifiers are arranged recursively on both sides of a memory cell array, so that the sense amplifiers face each other at a position touching memory units. Thus, chip size of the memory device is increased, thereby, it is impossible to add the sense amplifier to the memory device. CONSTITUTION: A memory device comprises a first memory unit including a sense amplifier for sensing data of a bit line in response to a first Y selection signal(RYS), a second memory unit including a sense amplifier for sensing data of a bit line in response to a second Y selection signal(LYS), and a selection sensing unit sensing either the first memory unit or the second memory unit in response to a result of a logical summation of the first Y selection signal(RYS) and the second Y selection signal(LYS), selectively, thereby, a chip area on layout of the memory device can be reduced by reducing the number of the sense amplifier located in position touching the first and the second memory units with each other, and the chip size of the memory device can be minimized by reducing an ineffectual area in proportion as a capacity of the memory is increased.
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