| 摘要 |
PURPOSE: Word line bootstrap circuit for semiconductor memory device is provided to suppression noise and to decrease current consumption. CONSTITUTION: A bootstrap circuit comprises input means for inputting pulse type word line signal and reference voltage signal, driver for supplying pumping driving signal in response to a output signal of the input means, first pumping means for pumping the word line signal in response to a output signal of the driver, second pumping means for pumping the word line signal in response to the output signal of the driver, the first and second pumping means pump alternatively, and output node controller connected to output node of the word line signal and for precharging and clamping the output node. Thereby, it is possible to reduce current consumption when word line voltage of SRAM is boosted.
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