PRODUCTION METHOD FOR POLYCIDE GATE

摘要

PURPOSE: A production method for a polycide gate is provided to prevent the deterioration of a gate oxide film by preventing an unreacted Titanium inside TiSi2 film from passing and diffusing up to the gate oxide film when forming the polycide gate. CONSTITUTION: The production method of the semiconductor element comprises a step of: laminating a gate isolation film and a polysilicon film on a semiconductor substrate(21) in order; injecting nitrogen inside a polysilicon film; forming the TiSi2 film(25) on the polysilicon film.