GATE ELECTRODE AND BIT LINE CREATING METHOD OF SEMICONDUCTOR DEVICE USING TITANIUM SILICIDE

摘要

PURPOSE: A gate electrode and a bit line creating method of a semiconductor device using titanium silicide is provided to solve the problem that resistance of the gate electrode rises. CONSTITUTION: The semiconductor device manufacturing method comprises the steps of: forming a polysilicon film(13) pattern that makes the gate electrode on a gate oxide film(12) of a semiconductor substrate(10); forming a first interlayer insulating film(15) on the entire structure; forming a first contact hole(17A) that exposes a polysilicon film pattern by selectively etching the first interlayer insulating film; and forming the gate electrode that is made into the first titanium silicide and the polysilicon film pattern by filling the first titanium silicide inside the first contact hole.