METHOD OF FABRICATING MOSFET HAVING POLYCIDE GATE

摘要

PURPOSE: The method is to form a MOSFET by forming a silicide film of low resistivity by preventing the agglomeration phenomenon of silicide in the post thermal process. CONSTITUTION: The method is to stack a tungsten film or a tungsten silicide film(4) on the bottom or top of a titanium silicide film(5) when the titanium silicide film is deposited. The tungsten or tungsten silicide film provides tungsten to the titanium silicide film and prevents the titanium silicide film from agglomerating in the high temperature process structurally. Therefore the high temperature process of 900°C is possible in the post process and there is no need to limit the temperature in the post thermal process.