POLYSILICON THIN FILM FORMING METHOD

摘要

PURPOSE: A polysilicon thin film forming method is provided to reduce the time of process and the expenses. CONSTITUTION: A polysilicon thin film forming method comprises the steps of: forming a polysilicon thin film by chemical vapor deposition on the substrate; growing the grain size of the polysilicon thin film to a larger size; proceeding to a quick heat treatment at the temperature range of 600¯900°C with 50¯150°C/sec of rising temperature speed in an hour.