TUNGSTEN FILM FORMING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A tungsten film forming method for a semiconductor device is provided to fill up completely the high step difference contact hole of less than sub-half micron with tungsten. CONSTITUTION: The forming process of all tungsten metal wiring comprises; forming an interlayer insulation film(31) on the silicon substrate(30) and forming a metal contact hole by etching it; evaporating a poly-silicon film(32) on overall the surface of the structure and filling up the contact hole by evaporating a tungsten film(33), and forming a plug by etching the tungsten film(33).