METHOD FOR FORMING WORD LINE AND BIT LINE CONTACT OF POLYCIDE STRUCTURE

摘要

PURPOSE: A method for forming a word line and a bit line contact of a polycide structure is provided to reduce a bit line and a word line contact resistance for improving a signal transferring speed. CONSTITUTION: A manufacturing method for a semiconductor apparatus comprises: a first step forming a doped first poly-silicon film(22) on a semiconductor substrate(20); a second step forming a first silicide film on the first poly-silicon film for forming a first polycide; a third step forming an interlayer insulating film on the whole structure and forming a contact hole(25) exposing the first silicide film; a fourth step forming a second poly-silicon film(26) in the contact hole; a fifth step injecting an ion for forming the poly-silicon film having a density grade of low-high-low densities from the bottom; and a sixth step forming a second silicide film on the second poly-silicon film for forming a second polycide.