METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: A method for forming a contact hole of a semiconductor memory apparatus is provided to prevent a junctional layer generated while etching the contact hole from damage. CONSTITUTION: A method for forming a contact hole in a cell area and an around area of a semiconductor memory apparatus containing a difference of steps comprises: forming an interlayer insulating film covering a lower layer; ion injecting selectively into the interlayer insulating film of the contact hole forming area of the cell area for forming a latticed damaging unit; and selectively etching the interlayer insulating film in the cell area and the around area for forming the contact hole.