发明名称 |
HIGH-FREQUENCY POWER SUPPLYING DEVICE OF SEMICONDUCTOR MANUFACTURING FACILITY |
摘要 |
PURPOSE: A high-frequency power supplying device of a semiconductor manufacturing facility is provided to smoothly contact a coupling to a rotary electrode when supplying the high-frequency power and to supply good high-frequency power. CONSTITUTION: A high-frequency power supplying device comprises: a coupling(18) to receive the high-frequency current and to supply the high-frequency current to a rotary electrode by contacting or without contacting; a supportive piece to reciprocate to be in contact with the coupling or not in contact and to provide a buffer to absorb the shock to the movement of the coupling; and a driving piece to supply the driving power to the supportive piece.
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申请公布号 |
KR20000003261(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980024465 |
申请日期 |
1998.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, YOON SIK;PARK, TAE HEE;CHA, HOON |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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