发明名称 HIGH-FREQUENCY POWER SUPPLYING DEVICE OF SEMICONDUCTOR MANUFACTURING FACILITY
摘要 PURPOSE: A high-frequency power supplying device of a semiconductor manufacturing facility is provided to smoothly contact a coupling to a rotary electrode when supplying the high-frequency power and to supply good high-frequency power. CONSTITUTION: A high-frequency power supplying device comprises: a coupling(18) to receive the high-frequency current and to supply the high-frequency current to a rotary electrode by contacting or without contacting; a supportive piece to reciprocate to be in contact with the coupling or not in contact and to provide a buffer to absorb the shock to the movement of the coupling; and a driving piece to supply the driving power to the supportive piece.
申请公布号 KR20000003261(A) 申请公布日期 2000.01.15
申请号 KR19980024465 申请日期 1998.06.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, YOON SIK;PARK, TAE HEE;CHA, HOON
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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