POLYSILICON FILM TRANSISTOR AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A polysilicon film transistor is provided to simplify the manufacturing process by means of etching the surface of the polysilicon layer. CONSTITUTION: The polysilicon film transistor comprises; a polysilicon layer(12) with a lug, a gate insulation film laminated on the lug of the polysilicon layer having the same width as the lug and a gate electrode; and ohmic contact layer(15) formed on the surface of the polysilicon layer to the specified depth; an insulation film having a contact hole to expose part of the ohmic contact layer.