METHOD FOR FABRICATING STATIC RANDOM ACCESS MEMORY CELL

摘要

PURPOSE: A method is for fabricating a static random access memory cell to enhance the reliability and the integrity of a device through process improvement, because the ill production rate and the cell size is increased due to the short problem of a contact and a bottom conduction layer. CONSTITUTION: A method can reduce the separation distance due to the short prevention or an overlay by; depositing a nitride film on top and on both sides of a word line(47A) and a ground potential line(47B); forming a first contact(49A) where one junction part of an access transistor(100) is revealed, and forming a second contact(49B) where the other junction part of the access transistor and a gate of a drive transistor(44B) are revealed; and forming a conductive pattern connected to the first and to the second contact respectively.