| 摘要 |
PURPOSE: A thin film transistor substrate is provided to decrease the breakdown of a thin film transistor caused by the static electricity, to simplify the process and to decrease the disconnection of a wire. CONSTITUTION: The thin film transistor substrate manufacturing method composes the steps of; forming a gate line(20) to the horizontal wise on a transparent insulating substrate(100); forming a gate pad(22) on the end of the gate line(20); connecting a gate line connecting unit(24) with the gate pad(22) to connect the gate pad(22) each other; and covering the gate lines(20, 21, 22, 24) and common lines(10, 11) with a gate insulating film(30) consisting of the nitride silicon and the like.
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