| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device minimizes an etching damage in a contact hole of low depth when forming contact holes of a different depth, and improves a reliability of a process and a contact resistance. CONSTITUTION: A method for manufacturing a semiconductor device forms a field oxidation layer (32) on a predetermined portion of a first conductive semiconductor substrate, passes through a field oxidation layer of a semiconductor substrate(31), and forms a gate (34) inserting a gate oxidation layer. A second conductive impurity is doped with a low density by using the gate as a mask, thereby forming a low density impurity area. Insulation barrier is formed on a side of the gate. The second conductive impurity is doped with a high density by using the insulation barrier and the gate as a mask, thereby forming a high density impurity area (39). A silicide layer (41) is formed on the gate of the impurity area. An etching preventive layer is formed on the silicide layer. An inter-insulation layer covering the gate is formed on the semiconductor substrate. The inter-insulation layer is selectively patterned, thereby forming the first and second contact holes (44,45) which expose the impurity area and the silicide layer. Thereby, the method enhances a reliability of a process, and prevents an increase of contact resistance.
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