| 摘要 |
PURPOSE: Photosensitive polymer containing silicon is provided for use in ArF eximer laser lithography and also provided is a chemically amplified resist composition. CONSTITUTION: Resist composition includes a photo acid generator(PAG) and a polymer for use in a chemically amplified resist, the polymer having the following formula: wherein R1 and R2 are -H or -CH3, R3 is -H or -Si(CH3)3, m/m+n is 0.1¯0.9. |
