| 摘要 |
PURPOSE: The device reduces the power consumption in bit line sensing and prevents the data error which can be occurred due to the bit line floating. CONSTITUTION: Memory cells are divided into plural regions and bit lines are formed to be connected to plural memory cells belonging to plural regions. Bit lines are divided electrically according to the switching state of a segment transistor(54, 55, 56, 57, 59, 61, 62, 64) by forming a source drain path of the segment transistor by intervening on the bit line. A Sense amp(102) is connected to one end of the line and a bit line precharge circuit(110) is connected to the other end of the line. The bit line sensing is performed as to the bit line connected to the sense amp when the bit line sensing as to the region except the most adjacent region to the bit line precharge circuit is performed, and the bit line connected to the bit line precharge circuit is precharged to a voltage.
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