CAPACITOR CHARGE STORING ELECTRODE MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: A capacitor charge storing electrode manufacturing method of a semiconductor memory apparatus is provided to easily form the cylindrical electrode by using the thermal oxidation and the wetting etching of the polysilicon. CONSTITUTION: The cylindrical charge storing electrode manufacturing method comprises the steps of: forming an insulating film(3) on a semiconductor substrate(1); having a forming space(10) of the capacitor charge storing electrode in a specific area by selectively etching the insulating film(3); evaporating the polysilicon on the front face of the insulating film(3); thermal oxidizing the upper area of the polysilicon by proceeding the thermal oxidation process; and eliminating the thermal oxidized polysilicon part by wetting etching the part.