FINE CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR DEVICE USING DOUBLE COATING

摘要

PURPOSE: A fine contact hole forming method of a semiconductor device is provided to form the fine pattern by overcoming the exposure limit which the existing exposing device has. CONSTITUTION: The fine pattern forming method of a semiconductor device comprises the steps of: painting a first polar photo sensitive film on the pattern object film and forming a first photo sensitive film pattern by using a first mask(2); baking the first photo sensitive film pattern; painting a second polar photo sensitive film opposite to the first polar on the pattern object film and the hardened first photo sensitive film pattern; forming a second polar photo sensitive film pattern by using a second mask(22) misaligned with the first mask(2); and etching the pattern object film by using the first and the second photo sensitive film patterns.