SEMICONDUCTOR DEVICE SEPARATING FILM MANUFACTURING METHOD

摘要

PURPOSE: A semiconductor device separating film manufacturing method is provided to improve the punch throw voltage and the binding leakage current. CONSTITUTION: The semiconductor device separating film manufacturing method comprises the steps of: forming a pad oxidizing film(2) by oxidizing a semiconductor substrate(1), and forming a nitrifying film(3) on the pad oxidizing film(2); opening the field by sequentially etching the nitrifying film(3) and the pad oxidizing film(2); forming a trench by etching the semiconductor substrate(1) of the exposed field; raising the oxidizing film(2) on the exposed trench and eliminating the oxidizing film(2) placed on the bottom of the trench; etching back by evaporating the silicon film doping the impurities; forming a device separation oxidizing film by oxidizing the upper part of the silicon film doping the impurities; and eliminating the nitrifying film(3).