GATE OXIDE FILM OF SEMICONDUCTOR MEMORY DEVICE FORMING METHOD

摘要

PURPOSE: A gate oxide film of the semiconductor device forming method is provided to reduce production cost by simplifying production process and stabilize the device characteristics by measuring accurately the thickness of the fate oxide film. CONSTITUTION: The gate oxide film of semiconductor is produced in the process of; etching a semiconductor substrate which includes a cell area and a peripheral circuit area and forming a trench(4); forming an element separation film by forming a insulation film(15) in the trench; removing selectively the element separation film formed in the cell area; forming a gate oxide film(7) on overall semiconductor substrate.