METHOD FOR CRYSTALLIZING A SILICON THIN FILM AND METHOD OF FORMING THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method of crystallizing an amorphous silicon is provided to reduce a crystallization speed by making a pattern of a laser beam with multi beam and processing a crystallization by use of a sequential lateral growing technology. CONSTITUTION: The method of crystallizing an amorphous silicon comprises the steps of: providing a plurality of laser beams spaced from each other; providing an amorphous silicon thin film crystallized by the laser beams; first illuminating the plurality of laser beams to the amorphous silicon thin film to lateral-grow silicon grains at a portion of the silicon thin film exposed at the first illumination of the laser beams; shifting the place of the laser beams for the amorphous silicon thin film by a predetermined first pitch; and second illuminating the plurality of laser beams to the amorphous silicon thin film to crystallize the portion of the silicon thin film exposed at the second illumination of the laser beams; and second crystallizing by a sequential lateral growing of the silicon grains grown by the first crystallization.