PRODUCTION METHOD OF CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A production method of a capacitor of semiconductor memory device is provided to prevent a micro-bridge among storage electrodes and to improve electro-static capacity by increasing the surface area of the capacitor. CONSTITUTION: The capacitor of semiconductor memory device has the steps of; forming the 1st insulating film(104) on semiconductor substrate having a transistor; etching the 1st insulating film(104) of form a contact hole(108) using a mask for forming the contact hole; forming a plug(109) electrically connected with the semiconductor substrate(100) by filling the contact hole with conducting materials.