METHOD OF MANUFACTURING A TRANSISTOR OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a transistor of a semiconductor device is provided to maintain the quantity of current by reducing the resistance of a lightly doped drain(LDD) region. CONSTITUTION: A method of manufacturing a transistor of a semiconductor device comprises the steps of: evaporating a gate oxidation layer, a polysilicon layer and a titanium layer, and patterning by under-etching titanium layer and the polysilicon layer; forming a lightly doped drain(LDD) region by injecting ions to regions of both sides of the titanium layer and the polysilicon layer etched after the patterning, and multi-laying an upper polysilicon layer; exposing the titanium layer by etching the upper polysilicon layer and forming a poly-spacer layer on both sides of the polysilicon layer; forming source/drain regions by injecting ions into the LDD region and forming a titanium-silicide layer by annealing.