METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of SAC(self aligned contact) is provided to achieve sufficient overlap margin of pads and DC(direct contacts) and prevent a short of gate electrodes. CONSTITUTION: The method comprises the steps of forming a gate electrode(104) on a semiconductor substrate(100) defined an active region(101) and an inactive region(102); forming a first insulating layer(108) on the gate electrode and the semiconductor substrate; forming a reverse pattern(110) on the first insulating layer; forming a contact hole between the gate electrodes by etching the first insulating layer using the reverse pattern(110) as a mask; removing the reverse pattern(110); filling a conductive layer(112) into the contact hole; polishing or etch-back the first insulating layer(108) and the conductive layer(112) until the gate electrodes are exposed; selectively etching the gate electrodes and the first insulating layer to expose the sidewalls of the conductive layer(112); and growing an HSG(hemi-spherical grain) layer(114) on the surface and the sidewalls of the conductive layer(112).