METHOD OF FABRICATING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE AND ITS STRUCTURE

摘要

PURPOSE: A fabrication method of a capacitor is provided to increase the capacitance of the capacitor. CONSTITUTION: A pattern of a bottom electrode(114) of the capacitor is etched so that at least one side of the pattern is separated with the inner wall of an opening which is formed on the surface of an interfacial insulating layer(104,108) covering the top of an access transistor formed on a substrate(100) to the source region of the access transistor.