METHOD FOR MANUFACTURING A MOS TRANSISTOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of MOS transistors having an input protection circuit and an inner circuit is provided to improve an operating property of the MOS transistor in the inner circuit and an ESD(electrostatic discharge) by using selective silicide process. CONSTITUTION: The fabrication method comprises the steps of: forming a gate oxide(3) on a semiconductor substrate(1); forming a first and a second gate electrodes(5a,5b) on the gate oxide(3) in the input protection circuit(a) and in the inner circuit(b), respectively; forming a spacer(9) at both sides of the first and second gate electrodes(5a,5b); forming an oxidative resisting material pattern(11) coated the inner circuit(b) and exposed the input protection circuit(a); forming a first source/drain regions(14) in the semiconductor substrate(1); selective forming a thermal oxidation layer(15) on the first gate electrode(5a) and the source/drain regions(14); removing the oxidative resisting material pattern(11); forming a second source/drain regions(20) in the semiconductor substrate(1) and at both sides of the second gate electrode(5b); and selective forming a metal silicide layer(21) on the second gate electrode(5b) and the second source/drain regions(20).