发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS
摘要 PURPOSE: A CMP(chemical mechanical polishing) apparatus is provided to improve a uniformity of polishing rate by using multi-carriers and a slurry supplying nozzle. CONSTITUTION: The CMP apparatus comprises: a plurality of carriers(102) for loading a wafer(104); a polishing pad(106) for polishing the wafer(104); and a slurry supplying nozzle(112) for supplying a slurry to the polishing pad(106). The slurry supplying nozzle(112) is formed at front surface of the carrier(102) and has a plurality of holes. The structure of the slurry supplying nozzle(112) is curve.
申请公布号 KR20000000583(A) 申请公布日期 2000.01.15
申请号 KR19980020262 申请日期 1998.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KWANG BOK
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址