发明名称 |
CHEMICAL MECHANICAL POLISHING APPARATUS |
摘要 |
PURPOSE: A CMP(chemical mechanical polishing) apparatus is provided to improve a uniformity of polishing rate by using multi-carriers and a slurry supplying nozzle. CONSTITUTION: The CMP apparatus comprises: a plurality of carriers(102) for loading a wafer(104); a polishing pad(106) for polishing the wafer(104); and a slurry supplying nozzle(112) for supplying a slurry to the polishing pad(106). The slurry supplying nozzle(112) is formed at front surface of the carrier(102) and has a plurality of holes. The structure of the slurry supplying nozzle(112) is curve.
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申请公布号 |
KR20000000583(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980020262 |
申请日期 |
1998.06.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KWANG BOK |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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