METHOD FOR FORMING FIELD EMISSION DISPLAYING ELEMENT

摘要

PURPOSE: A method for forming a field emission displaying element is provided to enable an element to drive with a low voltage by forming a field emission displaying element containing a gate hole of a submicron for driving with a low voltage. CONSTITUTION: A method for forming a field emission displaying element comprises: forming a first gate insulating film(25) on an upper part of a substrate(21) containing a cathode electrode; etching the first gate insulating film for forming a gate hole(39); forming a tip using a metal inside of the gate hole; eliminating the first gate insulating film; forming a nitride film having a certain thickness on the upper surface of the whole; forming a first gate metal on an upper part of a second gate insulating film formed on the upper surface of the whole; etching back the first gate metal for exposing a tip(29) containing the nitride film; forming a second gate metal on the upper surface of the whole; chemical mechanical polishing the second gate metal and the nitride film for exposing the metal tip at the lower unit of the nitride film; forming a fine gate hole formed by the second gate metal while isotropic wet-typed etching the nitride film for exposing the tip.