发明名称 SOURCE HEAD ASSEMBLY OF ION IMPLANTOR FOR SEMICONDUCTOR DEVICE PRODUCTION
摘要 PURPOSE: A source head assembly of an ion implanter for a semiconductor device production is provided to prevent to exclude a gas feed tube from an arch chamber by changing the contacting location of the arch chamber of the gas feed tube of the ion implanter from the side to the lower face. CONSTITUTION: The source head assembly of the ion implanter for the semiconductor device production comprises: a gas feed tube(5) to supply the gas as an ion source by contacting in an arch chamber(1), to joint in the lower face of the arch chamber(1); the gas inflowed into the arch chamber(1) via the lower face of the arch chamber(1).
申请公布号 KR20000002837(A) 申请公布日期 2000.01.15
申请号 KR19980023774 申请日期 1998.06.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YU, MYUNG SU
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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