NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A non-volatile semiconductor memory device is provided to save production time and cost and improve an elimination effect by simplifying the process. CONSTITUTION: The non-volatile semiconductor memory device comprises; the 1st insulation film(112) of which part of the area is thinner than that of the other part of the area; the 1st electrode formed on the thinner area of the 1st insulation film; the 2nd insulation film formed along the side of the 1st electrode; the 3rd insulation film formed on the 1st electrode; the 2nd electrode(126) formed on one side of the 1st electrode(120),