发明名称 |
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A production method for a semiconductor device is provided to prevent the reduction of a processing margin according to a shadowing effect by a photoresist when implanting for forming a well or a joining layer. CONSTITUTION: The production method for a semiconductor device comprises a step of: spreading a photoresist(23) onto a semiconductor substrate(20); forming a pattern of the photoresist by patterning the photoresist, and being at least one size of the open area of the pattern of the photoresist larger than the size of the prearranged implanted area; forming the implanted area by operating an inclined implantation using the pattern of the photoresist as the implanted mask.
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申请公布号 |
KR20000003357(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980024587 |
申请日期 |
1998.06.27 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
MIN, KYUNG YUL |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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