PATTERN FORMING METHOD OF HIGH INTERGRATED SEMICONDUCTOR DEVICE FOR CHEMICAL MECHANICAL POLISHING

摘要

PURPOSE: A pattern forming method of a semiconductor device is provided to reduce a topology of interlayer insulation film by a stepped pulley in a device sphere by improving the stability and reliability of the chemical mechanical polishing process. CONSTITUTION: The pattern forming method of a semiconductor device is formed by the steps of: forming a test pattern consisted of small patterns subdivided in the test pattern of a wafer and a dummy pattern consisted of small pattern subdivided in a blank space between a memory sell and a adjacent circuit spheres; evaporating an insulating film on the front face of the patterns of the wafer by using a high density plasma method; flattening the insulating film by the chemical mechanical polishing for the topology of the test and the dummy patterns.