METHOD FOR MEASURING A RESISTANCE OF POLYSILICON FILM OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A resistance measuring method of polysilicon films is provided to exactly measure the resistance value using an annealing process. CONSTITUTION: The measuring method comprises the steps of depositing a polysilicon layer of an amorphous configuration and implanting impurities on a test substrate simultaneously; thermal processing of high temperature the amorphous polysilicon layer for crystallization and activation; annealing the polysilicon layer at same temperature with a barrier metal by RTP(rapid thermal annealing); and measuring the resistance value of the annealed polysilicon layer.