发明名称 |
SEMICONDUCTOR MICROMACHINING METHOD |
摘要 |
A method of micromachining a silicon wafer that simultaneously forms narrow gaps having a width of 10 mu m or less and wider gap portions using an anistropic etching solution. The etching solution contains KOH in a concentration of 35% or less and the penetration etching is carried out such that the etching of the opposing walls and the face of the silicon wafer occur at the same rate. A method of manufacturing a capacitance-type acceleration detector in a silicon wafer using the aforementioned etching method. |
申请公布号 |
KR100238999(B1) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19970008101 |
申请日期 |
1997.03.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OTANI, HOROSHI;TSUKAI, MASAHIRO |
分类号 |
H01L29/84;B81B1/00;B81B3/00;B81C1/00;G01P15/08;G01P15/125;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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