METHOD FOR MANUFACTURING MEMORY DEVICES

摘要

PURPOSE: A fabrication method of memory devices is provided to improve a productivity by simplifying the manufacturing process using a single mask. CONSTITUTION: The method comprises the steps of: coating a first photo-resist(12) on a semiconductor substrate(10) and patterning the coated first photo-resist(12); exposing the remained first photo-resist; ion-implanting into the exposed semiconductor substrate(10); coating a second photo-resist(14) in the region removed the first photo-resist; ashing the first and the second photo-resists(14,12) and entirely removing the exposed first photo-resist; and stripping the second photo-resist to entirely remove the second photo-resist.