IMAGE SENSOR HAVING STACK TYPED PINNED PHOTODIODE

摘要

PURPOSE: A photodiode of an image sensor is provided to increase the unit area of the photodiode and have an excellent integration and photosensitivity. CONSTITUTION: The image sensor comprises: the semiconductor layer of the first conduction formed plural MOS transistor; the conductive layer of the first conduction contacting the semiconductor layer of the area that will form the photodiode and enlarged to the upper MOS transistor at a level with the semiconductor layer; the first diffusion area of the second conduction formed inside the conductive layer; and the second diffusion area of the first conduction formed on the lower surface of the conductive layer.