METHOD OF FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method is to fabricate a capacitor without bridge phenomenon through applying the deposition of a PSG film and a CMP process to the fabrication of the capacitor. CONSTITUTION: The method comprises the steps of: forming a conduction layer(15) on top of a semiconductor substrate; forming a sacrificial layer(16) for capacitor formation on top of the conduction layer; patterning the sacrificial layer and the conduction layer; forming a conduction layer(17) for side wall formation on the front surface of the substrate including the conduction layer and the sacrificial layer pattern; forming a conductive side wall on the side of the conduction layer and the sacrificial layer pattern by etching the conduction layer for side wall formation with blanket dry etching; forming an epilayer(20) identical with the sacrificial layer for capacitor formation; blanket polishing to the top of the epilayer and the conductive side wall through CMP process; and removing the epilayer and the sacrificial layer for capacitor formation by wet etching.