METHOD FOR INCREASING DIELECTRIC SURFACE AREA OF TANTALUM CAPACITOR

摘要

PURPOSE: A fabrication method of tantalum capacitor is provided to increase a dielectric surface area of tantalum capacitor. CONSTITUTION: The increasing method of dielectric surface area of tantalum capacitor comprises the steps of: a molding step(100) of mixing a polyurethane as a binder to a tantalum powder and inserting a tantalum wire(12) used as an anode lead wire to a pellet; a sintering step(200) of heating the molded tantalum powder in a vacuum furnace(20) at temperature of 1600-2000°C to remove the polyurethane; and a forming step(300) of a dielectric layer such as Ta2O5 on the surface of the tantalum device(10) by applying a DC voltage.