METHOD FOR ISOLATING TRENCH

摘要

PURPOSE: An isolated formation method for a trench is provided to reduce a strip time of an active nitride film and to prevent the oxidation preventive nitride film from being etched and dented while stripping the active nitride film. CONSTITUTION: An isolated formation method for a trench includes; defining a trench forming area(203) on a semiconductor substrate(200) for forming a trench mask layer including an active nitride film; etching the semiconductor substrate by using the trench mask layer for forming the trench; and forming an oxidized film on the trench floor and the both walls for eliminating a damage of the semiconductor substrate generated in the trench forming process.