发明名称 DATA OUTPUT BUFFER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A data input circuit of a semiconductor memory device is provided to guarantee the safe reading action. CONSTITUTION: The data output buffer circuit comprises: an output terminal for outputting data; a piece having a couple of pumping capacitors, for generating the pull-up signal having the voltage level higher than the inner power voltage level; a piece for generating the pull-down signal by responding to the data signal when the data output buffer control signal is activated; a piece for generating the pulse signal having a specific width; a piece for driving the output terminal by responding to the pull-up and the pull-down signals; and pre-charge circuits for respectively pre-charging the terminals of the pumping capacitors to the inner power voltage level.
申请公布号 KR20000002333(A) 申请公布日期 2000.01.15
申请号 KR19980023015 申请日期 1998.06.18
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 YUN, SE SEUNG;KIM, GI HONG
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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