| 摘要 |
PURPOSE: A semiconductor device is provided to prevent a damage occurring in electrostatic discharge (ESD) test of the device produced. CONSTITUTION: The semiconductor device comprising a semiconductor chip (40) in which a internal circuit is integrated, and a lead frame molded together with a non-wired NC pin (32) as a molding material, and an EDS protect pad (143) for the non-wired NC pin connecting with the non-wired NC pin through a wire bonding (30) on the chip wherein the fabricating method of the EDS protect pad comprising the steps of: forming a first well region by diffusing locally a second conductive type impurity within a fist conductive type impurity, forming a second well region by diffusing locally a first conductive type impurity whine the first well region, and stacking and patterning a metal layer within the second well region.
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