METHOD FOR FORMING WIRES OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of wires is provided to remove particles generated at the time of forming a tungsten silicide layer by adding a cleaning process. CONSTITUTION: The method comprises the steps of forming an HLD(High temperature Low pressure Dielectric) layer(22) on a substrate(21) having devices; sequentially forming a polysilicon layer(23) and a tungsten silicide layer(24) on the HLD layer; removing particles formed at the time of forming the W silicide layer by using a cleaning process; depositing an anti-reflection layer(25) on the W silicide layer and coating a photoresist layer(26); and selective removing the anti-reflection layer, the W silicide layer and the polysilicon layer using the photoresist pattern as an etching mask.