| 摘要 |
PURPOSE: A semiconductor device production method is provided to form a contact pad in a simple process and improve characteristics of the device. CONSTITUTION: The semiconductor device production method comprises steps of; forming an element separation film(31), a gate insulation film(32), a gate electrode(33)(word line) and the 1st dopant doping area(34) on a silicon substrate(30); forming the 1st interlayer insulation film(37), removing the 1st interlayer insulation film(37), exposing the 1st and the 2nd dopant doping area(34,34') and forming a silicon film(48) on overall the structure.
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