METHOD OF FORMING CAPACITOR HAVING NITRIDE FILM AS DIELECTRIC FILM

摘要

PURPOSE: The capacitor has a nitride film as a dielectric film to improve the electrical characteristics by forming the nitride film thinly and at the same time obtaining the layer covering characteristics. CONSTITUTION: The method comprises the steps of: forming a bottom electrode(12) of polysilicon film on the top of a semiconductor substrate(10); forming a first oxide film on the bottom electrode; forming a nitride film(13) at low deposition rate of 0.5 angstrom/minute or 1.5 angstrom/minute; forming a second oxide film on the whole structure; and forming a top electrode on the second oxide film.