METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING HIGH DENSITY PLASMA OXIDE FILM AS INTERFACIAL INSULATION FILM

摘要

PURPOSE: The method prevents Ar gas contained in a High Density Plasma(HDP) oxide film by a high temperature process from degassing into an open aperture when burying a conduction film in the open aperture formed through the HDP oxide film. CONSTITUTION: The method improves the burying characteristics in depositing a conduction film such as an aluminum film by covering the side wall part of a contact hole with a barrier insulation spacer such as a silicon nitride film(12) and a silicon oxide film preventing Ar from degassing into the contact hole, after forming the contact hole(or via hole) after depositing a high density plasma(HDP) oxide film(11).