SEMICONDUCTOR DEVICE COMPRISING CAPACITOR ON BOTTOM OF PAD

摘要

PURPOSE: The device improves the characteristics and reliability of a semiconductor device by improving output slew rate by increasing capacitance between power source voltage and a ground power source using the area of a pad bottom without changing circuit or process. CONSTITUTION: The device is characterized by comprising: an n-well(24) comprising an n+ diffusion layer(26) on a p-type semiconductor substrate(20) to form an input/output pad; a gate electrode(28) connected with a ground power source(Vss) terminal connected with a source(50) of an NMOS pull-down transistor; a bit line contact plug(30) connected with the n+ diffusion layer of a part where a bit line is to be formed; and a bit line(32) which is connected with the bit line contact plug and connected with a source of a PMOS pull-up transistor.